NVMFS6H818NL

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel 80 V, 3.2 mW, 135 A V(BR)DSS 80 V RDS(ON) MAX 3.2 mW @ 10 V 4.1 mW @ 4.5 V ID MAX 135 A NVMFS6H818NL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H818NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 135 A 95 Power Dissipation RqJC (Note 1) TC = 25°C PD TC = 100°C 140 W 70S Continuous Drain Current RqJA (Notes 1, 2, 3) Steady TA = 25°C ID State TA = 100°C 22 A 16 Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD TA = 100°C 3.8 W 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 772 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 9.3 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 116 A EAS 707 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should no...