NVMFS6H858NL

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A V(BR)DSS 80 V RDS(ON) MAX 19.5 mW @ 10 V 25 mW @ 4.5 V ID MAX 30 A NVMFS6H858NL D (5,6) Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  NVMFS6H858NLWF − Wettable Flank Option for Enhanced Optical Inspection  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS 20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25C ID Steady TC = 100C State TC = 25C PD TC = 100C 30 A 21 42 W 21 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25C ID Steady TA = 100C State TA = 25C PD TA = 100C 8.7 A 6.1 3.5 W 1.8 Pulsed Drain Current TA = 25C, tp = 10 ms IDM 142 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.5 A) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) IS 35 A EAS 198 mJ TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and re...