DATA SHEET www.onsemi.com
MOSFET - Power, Single N-Channel
80 V, 19.5 mW, 30 A
V(BR)DSS 80 V
RDS(ON) MAX 19.5 mW @ 10...
DATA SHEET www.onsemi.com
MOSFET - Power, Single N-Channel
80 V, 19.5 mW, 30 A
V(BR)DSS 80 V
RDS(ON) MAX 19.5 mW @ 10 V 25 mW @ 4.5 V
ID MAX 30 A
NVMFS6H858NL
D (5,6)
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H858NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
80
V
Gate−to−Source
Voltage
VGS
20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25C
ID
Steady TC = 100C
State TC = 25C
PD
TC = 100C
30
A
21
42
W
21
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25C
ID
Steady TA = 100C
State TA = 25C
PD
TA = 100C
8.7
A
6.1
3.5
W
1.8
Pulsed Drain Current TA = 25C, tp = 10 ms
IDM
142
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.5 A)
Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
IS
35
A
EAS
198 mJ
TL
260 C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and re...