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NVMTS1D1N04C MOSFET Datasheet PDF

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part Number NVMTS1D1N04C
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 40 V, 1 .
1 mW, 277 A NVMTS1D1N04C Features Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Cond uction Losses
• Low QG and Capacitanc e to Minimize Driver Losses
• New Pow er 88 Package
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant MAXIM UM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±2 0 V Continuous Drain Current RqJC (No tes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C St .
Manufacture ON Semiconductor
Datasheet
Download NVMTS1D1N04C Datasheet

NVMTS1D1N04C

 

 

 


 

 

 

Part Number NVMTS1D1N04C
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 40 V, 1 .
1 mW, 277 A NVMTS1D1N04C Features Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Cond uction Losses
• Low QG and Capacitanc e to Minimize Driver Losses
• New Pow er 88 Package
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant MAXIM UM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±2 0 V Continuous Drain Current RqJC (No tes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C St .
Manufacture ON Semiconductor
Datasheet
Download NVMTS1D1N04C Datasheet

NVMTS1D1N04C

 

 

 

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