NVMTS1D1N04C

MOSFET - Power, Single N-Channel 40 V, 1.1 mW, 277 A NVMTS1D1N04C Features Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses New Power 88 Package AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 277 A 196 153 W 76.5 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 48.8 A 34.5 4.7 W 2.4 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 22 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 128 A EAS 721 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.98 °C/W Junctio...