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NVMTS1D1N04C MOSFET Datasheet PDFN-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part Number | NVMTS1D1N04C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 1 . 1 mW, 277 A NVMTS1D1N04C Features †¢ Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Cond uction Losses • Low QG and Capacitanc e to Minimize Driver Losses • New Pow er 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIM UM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±2 0 V Continuous Drain Current RqJC (No tes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C St . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | NVMTS1D1N04C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 1 . 1 mW, 277 A NVMTS1D1N04C Features †¢ Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Cond uction Losses • Low QG and Capacitanc e to Minimize Driver Losses • New Pow er 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIM UM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±2 0 V Continuous Drain Current RqJC (No tes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C St . |
| Manufacture | ON Semiconductor |
| Datasheet |
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