MOSFET - Power, Single N-Channel
80 V, 29 mW, 22 A
NVMYS029N08LH
Features
• Small Footprint (5x6 mm) for Compact Desig...
MOSFET - Power, Single N-Channel
80 V, 29 mW, 22 A
NVMYS029N08LH
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard
AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
80
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
22
A
15
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
TC = 100°C
33
W
17
Continuous Drain Current RqJA (Notes 1, 2, 3)
Steady TA = 25°C
ID
State
TA = 100°C
7
A
5
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
PD
TA = 100°C
3.5
W
1.7
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
97
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.0 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
28
A
EAS
68
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
4.6 °C/W
Ju...