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NVMYS4D6N06C Datasheet

Part Number NVMYS4D6N06C
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NVMYS4D6N06C DatasheetNVMYS4D6N06C Datasheet (PDF)

MOSFET - Power, Single N-Channel 60 V, 4.7 mW, 92 A NVMYS4D6N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes .

  NVMYS4D6N06C   NVMYS4D6N06C






N-Channel Power MOSFET

MOSFET - Power, Single N-Channel 60 V, 4.7 mW, 92 A NVMYS4D6N06C Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 92 A 65 79.5 W 39.8 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 20.8 A 14.7 4.1 W 2.0 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 565 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5.3 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 66.3 A EAS 524 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.89 °C/W Junction−to−Ambient − Steady Sta.


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