NVTYS003N04C

MOSFET – Power, Single N-Channel 40 V, 3.9 mW, 99 A NVTYS003N04C Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 99 A 70 69 W 34 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 21 A 15 3.2 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 465 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7.4 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 57 A EAS 21 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 3) RqJC 2.2 °C/W Junction−...