NX138BKW

NX138BKW 60 V, N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 210 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.1 3.5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Nexperia NX138BKW 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 SC-70 (SOT323) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name NX138BKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 7. Marking Table 4. Marking codes Type number NX138BKW Marking code [1] B8% [1] % = placeh...