NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product pro...
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench
MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold
voltage Very fast switching Trench
MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Level shifter Power supply converter
Load switch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR2 (P-channel)
VDS drain-source
voltage VGS gate-source
voltage ID drain current TR1 (N-channel)
Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C
-8 [1] -
-
-30 8 -200
V V mA
VDS drain-source
voltage Tj = 25 °C
VGS gate-source
voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
TR1 (N-channel), Static characteristics
-8 [1] -
-
30 V 8V 350 mA
RDSon
drain-source on-state VGS = 4.5 V; ID = 350 mA;
resistance
Tj = 25 °C
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V;
resistance
ID = -200 mA; Tj = 25 °C
- 1 1.4 Ω - 2.8 4.1 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench
MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
Pinning information S...
