NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product pro...
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench
MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold
voltage Very fast switching Trench
MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Level shifter Power supply converter
Load switch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR2 (P-channel)
VDS drain-source
voltage VGS gate-source
voltage ID drain current TR1 (N-channel)
Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C
-8 [1] -
-
-30 8 -220
V V mA
VDS drain-source
voltage Tj = 25 °C
VGS gate-source
voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
TR1 (N-channel), Static characteristics
-8 [1] -
-
30 V 8V 400 mA
RDSon
drain-source on-state VGS = 4.5 V; ID = 350 mA;
resistance
Tj = 25 °C
- 1 1.4 Ω
TR2 (P-channel), Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -200 mA; - 2.8 4.1 Ω
resistance
Tj = 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench
MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
Pinning infor...