NX3008NBK

NX3008NBK 30 V, 400 mA N-channel Trench MOSFET 5 November 2022 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 350 mA; Tj = 25 °C resistance Min Typ Max Unit - - 30 V -8 - 8 V - - 400 mA - 1 1.4 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Simplified outline 3 Graphic symbol D G 1 2 SOT23 S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name NX3008NBK SOT23 Description plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Version SOT23 7. Marking Table 4. Marking codes Type number...