NX3008NBKMB

NX3008NBKMB 30 V, single N-channel Trench MOSFET 5 November 2022 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile with 0.37 mm height 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 350 mA; Tj = 25 °C resistance Min Typ Max - - 30 -8 - 8 - - 530 - 1 1.4 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Unit V V mA Ω Nexperia NX3008NBKMB 30 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 1 2 Transparent top view DFN1006B-3 (SOT883B) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name NX3008NBKMB DFN1006B-3 Description Version plastic, leadless ultra...