NX3008NBKS
30 V, 350 mA dual N-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
1. Product profile
1.1 G...
NX3008NBKS
30 V, 350 mA dual N-channel Trench
MOSFET
Rev. 1 — 1 August 2011 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching Low threshold
voltage Trench
MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source
voltage gate-source
voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 1
Max 30 8 350 1.4
Unit V V mA Ω
Per transistor
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
NX3008NBKS
30 V, 350 mA dual N-channel Trench
MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1
1 2 3
G1 G2
Simplified outline
6 5 4
Graphic symbol
D1
D2
SOT363 (SC-88)
S1 S2
017aaa256
3. Ordering information
Table 3. Ordering information Package Name NX3008NBKS SC-88 Description plastic surfac...