NX3008NBKW

SO T3 NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 23 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 350 1.4 Unit V V mA Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain G Simplified outline 3 Graphic symbol D 1 2 SOT323 (SC-70) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name NX3008NBKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4. Marking Table 4. Marking codes Marking code[1] AA% Type number NX3008NBKW [1] % = pl...