NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
11 November 2013
Product data sheet
1. General description
Dual...
NX3020NAKS
30 V, 180 mA dual N-channel Trench
MOSFET
11 November 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Very fast switching Trench
MOSFET technology ESD protection Low threshold
voltage
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source
voltage Tj = 25 °C
- - 30 V
VGS gate-source
voltage
-20 -
20 V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1] - - 180 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
NX3020NAKS
30 V, 180 mA dual N-channel Trench
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1
Simplified outline
654
Graphic symbol
D1
D2
123
TSSOP6 (SOT363)
G1
G2
S1 S2 017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX3020NAKS
TSSOP6
Description plastic surface-mounted package; 6 le...