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NX3020NAKV Datasheet

Part Number NX3020NAKV
Manufacturers nexperia
Logo nexperia
Description Dual N-channel MOSFET
Datasheet NX3020NAKV DatasheetNX3020NAKV Datasheet (PDF)

NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching c.

  NX3020NAKV   NX3020NAKV






Part Number NX3020NAKV
Manufacturers NXP
Logo NXP
Description dual N-channel Trench MOSFET
Datasheet NX3020NAKV DatasheetNX3020NAKV Datasheet (PDF)

NX3020NAKV 29 October 2013 SO T6 6 6 30 V, 200 mA dual N-channel Trench MOSFET Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch .

  NX3020NAKV   NX3020NAKV







Dual N-channel MOSFET

NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 200 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.7 4.5 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided c.


2019-06-04 : NX3008PBKS    NX3020NAKW    NX3008NBKV    NX3008PBKMB    PSMN2R7-30PL    TIP42B    TIP42C    TIP42A    TIP42C    TIP42   


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