NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel en...
NX3020NAKW
30 V, 180 mA N-channel Trench
MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Very fast switching Trench
MOSFET technology ESD protection Low threshold
voltage
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tj = 25 °C
- - 30 V
VGS gate-source
voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 180 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
NX3020NAKW
30 V, 180 m...
