NX7002BK

SOT23 NX7002BK 60 V, N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 270 mA VGS = 10 V; Tsp = 25 °C - - 330 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.2 2.8 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors NX7002BK 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name NX7002BK TO-236AB Description plastic surface-mounted package; 3 leads V...