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NX7002BKH Datasheet

Part Number NX7002BKH
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet NX7002BKH DatasheetNX7002BKH Datasheet (PDF)

NX7002BKH 60 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x .

  NX7002BKH   NX7002BKH






Part Number NX7002BKXB
Manufacturers nexperia
Logo nexperia
Description dual N-channel MOSFET
Datasheet NX7002BKH DatasheetNX7002BKXB Datasheet (PDF)

NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM .

  NX7002BKH   NX7002BKH







Part Number NX7002BKXB
Manufacturers NXP
Logo NXP
Description dual N-channel Trench MOSFET
Datasheet NX7002BKH DatasheetNX7002BKXB Datasheet (PDF)

DFN1010B- 6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection.

  NX7002BKH   NX7002BKH







Part Number NX7002BKW
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet NX7002BKH DatasheetNX7002BKW Datasheet (PDF)

NX7002BKW 60 V, single N-channel Trench MOSFET 10 December 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loads.

  NX7002BKH   NX7002BKH







Part Number NX7002BKW
Manufacturers NXP
Logo NXP
Description single N-channel Trench MOSFET
Datasheet NX7002BKH DatasheetNX7002BKW Datasheet (PDF)

SOT323 NX7002BKW 60 V, single N-channel Trench MOSFET 20 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side .

  NX7002BKH   NX7002BKH







Part Number NX7002BKS
Manufacturers nexperia
Logo nexperia
Description Dual N-channel MOSFET
Datasheet NX7002BKH DatasheetNX7002BKS Datasheet (PDF)

NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswi.

  NX7002BKH   NX7002BKH







N-channel MOSFET

NX7002BKH 60 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - 60 VGS gate-source voltage -20 - 20 ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 350 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2 2.8 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2. Unit V V mA Ω Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain NX7002BKH 60 V, N-channel Trench MOSFET Simplified outline 2 1 3 Graphic symbol D G Transparent top view DFN0606-3 (SOT8001) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name NX7002BKH DFN0606-3 Descri.


2019-07-28 : NX3008CBKS    NX138BKW    NX138BKS    NX138BK    NX138AK    BUK7D25-40E    NX1029X    BUK6D81-80E    PSMN015-60PS    PSMN013-100BS   


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