NXH240B120H3Q1SG

3 Channel Q1 BOOST Module NXH240B120H3Q1PG, NXH240B120H3Q1PG-R, NXH240B120H3Q1SG The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features 1200 V Ultra Field Stop IGBTs Low Reverse Recovery and Fast Switching SiC Diodes Low Inductive Layout Press−fit Pins Thermistor Typical Applications Solar Inverters ESS 21, 22 BYS1 19, 20 BST1 16 G1 15 E1 D13 T1 D12 D11 23, 24 BYS2 25, 26 BST2 10 G2 9 E2 D23 T2 D22 D21 DC+1−2 11, 12 13, 14 DC−1 17, 18 NTC1 31 NTC2 32 DC−2 7, 8 29, 30 BYS3 27, 28 BST3 4 G3 3 E3 D33 T3 D32 D31 DC+3 1, 2 5, 6 DC−3 Figure 1. Schematic Diagram DATA SHEET www.onsemi.com PIM32 (PRESS−FIT) CASE 180AX PIM32 (SOLDER−PINS) CASE 180BQ MARKING DIAGRAM NXH240B120H3Q1xG ATYYWW NXH240B120H3Q1xG = Specific Device Code x = P or S G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN ASSIGNMENTS ORDERING INFORMATION See detailed ordering and shipping information in the dimensions section on page 12 of this data sheet. © Semiconductor Components Industries, LLC, 2019 1 January, 2022 − Rev. 1 Publication Order Number: NXH240B120H3Q1PG/D NXH240B120H3Q1PG, NXH240B120H3Q1PG−R, NXH240B120H3Q1SG Table 1. MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit IGBT (T1, T2, T3) Collector−Emitter ...