OD-100

SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches .031 .014 .018 .500 CATHODE .040 45* ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA MB E MIN 80 TYP 100 1300 60 80 110 1.65 5 30 90 0.7 0.7 880 1000 mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 145°C/W Typical 75°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com http://www.Datasheet4U.com RoHS ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Peak Forward Current (10μs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 1Heat transfer minimized by measuring in still air with minimum heat conducting through l...