OD-669

HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES Highest power output available 880nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case OD-669 .053 .067 LED CHIPS .140 R (REF. ONLY) .342 R .325 . 142 . 152 EPOXY .084 .096 .030 .426 .432 .955 .965 1.225 1.255 .480 .350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 300mA IF = 5A IF = 50mA IF = 300mA IR = 10µA VR = 0V MIN 390 TYP 500 6500 880 120 30 11 3 3 80 MAX UNITS mW nm Deg nm Reverse Breakdown Voltage, VR 5 13.5 15 Volts Volts µsec µsec pF ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 5A 6W Peak Forward Current (10µs, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air c...