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OD-880W Datasheet

Part Number OD-880W
Manufacturers OPTO DIODE
Logo OPTO DIODE
Description HIGH-POWER GaAlAs IR EMITTERS
Datasheet OD-880W DatasheetOD-880W Datasheet (PDF)

HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Wide emission angle to cover a large area .041 GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .100 CATHODE .143 .150 .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output.

  OD-880W   OD-880W






Part Number OD-880W
Manufacturers OptoDiode
Logo OptoDiode
Description HIGH-POWER GaAlAs IR EMITTERS
Datasheet OD-880W DatasheetOD-880W Datasheet (PDF)

HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Wide emission angle to cover a large area GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .143 .150 .100 .041 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise speci.

  OD-880W   OD-880W







HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Wide emission angle to cover a large area .041 GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .100 CATHODE .143 .150 .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 50mA MB E MIN 18 TYP 20 16 80 80 1.55 5 30 17 0.5 0.5 880 70 190mW 100mA 3A 5V 260°C -55°C TO 100°C 100°C 400°C/W Typical 135°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 1.9 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com http://www.Datasheet4U.com Power Dissipation1 Continuous Forward Current Reverse Voltage Peak Forward Current (10μs, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 1Heat trans.


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