NIR/RED ENHANCED 6 mm2 PHOTODIODE-PREAMPLIFIER
Vout CASE
+V .078
.031
.035 GND
∅.370 ∅.358
(∅.325)
–V
(∅.200 PIN CTRS)
(.012 MAX)
SHOWN WITH CAP REMOVED FOR CLARITY
.085 .050 MIN
∅.016 ∅.019 .028 .163
R1
C1
IN –
D1
U1 IN +
12
3 +V
0.1 ufd 4 V OUT
– V 0.1 ufd
ODA-6W-100M
FEATURES • Large active area • Low noise • High sensitivity • Custom gains available • Hermetically sealed TO-39
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 23°C
PARAMETERS
TEST CONDITIONS
Dark Offset Dark Offs.
PHOTODIODE-PREAMPLIFIER
NIR/RED ENHANCED 6 mm2 PHOTODIODE-PREAMPLIFIER
Vout CASE
+V .078
.031
.035 GND
∅.370 ∅.358
(∅.325)
–V
(∅.200 PIN CTRS)
(.012 MAX)
SHOWN WITH CAP REMOVED FOR CLARITY
.085 .050 MIN
∅.016 ∅.019 .028 .163
R1
C1
IN –
D1
U1 IN +
12
3 +V
0.1 ufd 4 V OUT
– V 0.1 ufd
ODA-6W-100M
FEATURES • Large active area • Low noise • High sensitivity • Custom gains available • Hermetically sealed TO-39
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 23°C
PARAMETERS
TEST CONDITIONS
Dark Offset Dark Offset Noise
Vs = ± 5 V Vs = ± 5 BW = 0.1 to 1000 Hz
Sensitivity
Vs = ± 5 V λ = 940 nm
Frequency Response (-3 db)
Vs = ± 5 V λ = 940 nm
NEP
λ = 940 nm
Transimpedence Gain
Supply Current
THERMAL PARAMETERS
Voltage Supplies Power Dissipation Storage and Operating Temperature Soldering Temperature (1/16" from case for 3 secconds max)
MIN TYP MAX UNITS 1.2 ± 2 mV 198 250 µV rms
55 63
V/µW
900 1000
Hz
0.08 100 850
pW/√Hz MΩ
950 µA
± 5 to ± 15.