GaAs Hall Devices
OH10009
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)...
GaAs Hall Devices
OH10009
GaAs Hall Device
Magnetic sensor I Features
Hall
voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) Input resistance: typ. 0.75 kΩ Satisfactory linearity of GaAs hall
voltage with respect to the magnetic field Small temperature coefficient of the hall
voltage: β ≤ − 0.06%/°C Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package.
2.9 ± 0.2
0.65 ± 0.15
Unit : mm
2.8 − 0.3 1.5 − 0.3
+ 0.2 + 0.2
0.65 ± 0.15
0.5 R
0.95
1.9 ± 0.2
4
1
0.95
3
2
Various hall motor (VCR, phonograph, VD, CD, and FDD) Automotive equipment Industrial equipment Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter Control
voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 150 −30 to +125 −55 to +125 Unit V mW °C °C
1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin)
Marking Symbol: O9
I Electrical Characteristics Ta = 25°C
Parameter Hall
voltage*1 Unequilibrium ratio*2, 4 Input resistance Output resistance Temperature coefficient of hall
voltage Temperature coefficient of input resistance Linearity of hall
voltage*3 Note) *1 : VH = *2 : *3 : Symbol VH VHO RIN ROUT β α γ Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.5 0.75 ...