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P0260ETF Datasheet

Part Number P0260ETF
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel MOSFET
Datasheet P0260ETF DatasheetP0260ETF Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode P0260ETF:TO-220F Field Effect Transistor P0260ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω ID 2A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC =.

  P0260ETF   P0260ETF






Part Number P0260ETF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0260ETF DatasheetP0260ETF Datasheet (PDF)

P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω @VGS = 10V ID 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 2 1.3 8 2 20 Power Dissipation TC = 25 °C TC = 100 °C PD 29 11 Operating Junction.

  P0260ETF   P0260ETF







N-Channel MOSFET

NIKO-SEM N-Channel Enhancement Mode P0260ETF:TO-220F Field Effect Transistor P0260ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω ID 2A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS 600 ±30 2 1.3 8 2 20 29 11 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH ,starting TJ = 25˚C TYPICAL MAXIMUM 4.3 62.5 UNITS °C / W ELECTRICAL CHARACTERISTICS.


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