DatasheetsPDF.com

P0550BD Datasheet

Part Number P0550BD
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0550BD DatasheetP0550BD Datasheet (PDF)

P0550BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.75Ω @VGS = 10V ID 4.5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4.5 3 15 31 Power Dissipation TC = 25 °C TC = 100 °C PD 52 20 Operating Junction & S.

  P0550BD   P0550BD






Part Number P0550BT
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0550BD DatasheetP0550BT Datasheet (PDF)

P0550BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.75Ω @VGS = 10V ID 4.5A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 500 V VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 TC = 25 °C TC = 100 °C ID IDM 4.5 3 A 15 Avalanche Current IAS 5 Avalanche Energy L = 8.7mH EAS 109 mJ Power Dissipation TC =.

  P0550BD   P0550BD







MOSFET

P0550BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.75Ω @VGS = 10V ID 4.5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4.5 3 15 31 Power Dissipation TC = 25 °C TC = 100 °C PD 52 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.4 62.5 UNITS °C / W Ver 1.1 1 2013-3-14 P0550BD N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Sou.


2017-02-06 : SST26VF032BA    SST26VF064B    SST26VF064BA    SST26WF016B    SST26WF016BA    SST38VF6401    SST38VF6402    SST38VF6403    P092ABD    P1003BDF   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)