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P0603BDD Datasheet

Part Number P0603BDD
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0603BDD DatasheetP0603BDD Datasheet (PDF)

P0603BDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 71A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 71 45 180 Avalanche Current IAS 41 Avalanche Energy L=0.1mH EAS 84 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Junction & Storage Temperature R.

  P0603BDD   P0603BDD






Part Number P0603BDL
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0603BDD DatasheetP0603BDL Datasheet (PDF)

P0603BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 6.8mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 68 43 160 Avalanche Current IAS 52 Avalanche Energy L = 0.3mH EAS 135 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junc.

  P0603BDD   P0603BDD







Part Number P0603BDG
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0603BDD DatasheetP0603BDG Datasheet (PDF)

P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.5mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 68 43 180 Avalanche Current IAS 52 Avalanche Energy L=0.1mH EAS 136 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Ju.

  P0603BDD   P0603BDD







Part Number P0603BDG
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel MOSFET
Datasheet P0603BDD DatasheetP0603BDG Datasheet (PDF)

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0603BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 6.5m ID 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 75 50 170 40 140 5.6 60 32.75 -55 to 150 275 .

  P0603BDD   P0603BDD







Part Number P0603BDF
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0603BDD DatasheetP0603BDF Datasheet (PDF)

P0603BDF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 78A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 78 49 140 Avalanche Current IAS 35 Avalanche Energy L=0.1mH EAS 61.2 Power Dissipation TC= 25 °C TC= 100°C PD 60 24 Operating Junction & Storage Temperature.

  P0603BDD   P0603BDD







MOSFET

P0603BDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 71A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 71 45 180 Avalanche Current IAS 41 Avalanche Energy L=0.1mH EAS 84 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A. SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.5 °C / W REV 1.0 1 2014/5/4 P0603BDD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Thresh.


2017-02-06 : SST26VF032BA    SST26VF064B    SST26VF064BA    SST26WF016B    SST26WF016BA    SST38VF6401    SST38VF6402    SST38VF6403    P092ABD    P1003BDF   


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