P062ABDF
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 7mΩ @VGS = 10V
ID 75A
...
P062ABDF
N-Channel Logic Level Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 7mΩ @VGS = 10V
ID 75A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
75 50 170
Avalanche Current
IAS 45
Avalanche Energy
L=0.1mH
EAS
100
Power Dissipation
TC= 25 °C TC= 100°C
PD
54 32.75
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA RqCS
TYPICAL 0.6
MAXIMUM 2.3 62.5
UNITS °C / W
REV 1.0
1 2014/4/29
P062ABDF
N-Channel Logic Level Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
...
