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P06B03LVG Datasheet

Part Number P06B03LVG
Manufacturers UNIKC
Logo UNIKC
Description P-Channel MOSFET
Datasheet P06B03LVG DatasheetP06B03LVG Datasheet (PDF)

P06B03LVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 50mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -5 -30 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 1.

  P06B03LVG   P06B03LVG






Part Number P06B03LVG
Manufacturers Niko
Logo Niko
Description Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet P06B03LVG DatasheetP06B03LVG Datasheet (PDF)

Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor www.DataSheet4U.com SOP-8 Lead Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 50m£[ ID -6A G :GATE D :DRAIN S :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±20 -6 -5 UNITS V V TC = 25 °C TC = 70 °C ID IDM A -30 2.5 1.3 W TC .

  P06B03LVG   P06B03LVG







P-Channel MOSFET

P06B03LVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 50mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -5 -30 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.5 °C / W REV 1.1 1 2015/11/13 P06B03LVG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0.


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