P0803BDG

P0803BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.2mΩ @VGS = 10V ID 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 60 38 120 Avalanche Current IAS 35 Avalanche Energy L=0.1mH EAS 60 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.5 62.5 UNITS °C / W REV 1.0 1 2014/5/6 P0803BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS...