P0903BKB

P0903BKB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 49 31 120 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 9.8 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 42 TC = 25 °C 35 Power Dissipation TC = 100 °C TA = 25 °C PD 14 2.2 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C Ver 1.0 1 2012/4/16 P0903BKB N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RqJC Junction-to-Ambient3 RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 bo...