P0903BV

P0903BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.65mΩ @VGS = 10V ID 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 100 °C ID IDM IAS 13 8 50 32 Avalanche Energy L =0.1mH EAS 51 Power Dissipation TA= 25 °C TA =100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.5 1 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 50 25 UNITS °C / W REV 1.0 1 2014/10/23 P0903BV N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Volta...