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P0908AD Datasheet

Part Number P0908AD
Manufacturers UNIKC
Logo UNIKC
Description N-Channel Transistor
Datasheet P0908AD DatasheetP0908AD Datasheet (PDF)

P0908AD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ @VGS = 10V ID 69A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1,2 TC= 25 °C TC= 100 °C ID IDM 69 44 160 Avalanche Current IAS 38 Avalanche Energy L=0.1mH EAS 72 Power Dissipation TC= 25 °C TC= 100°C PD 96 38 Operating Junction & Storage Te.

  P0908AD   P0908AD






Part Number P0908ATF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0908AD DatasheetP0908ATF Datasheet (PDF)

P0908ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ @VGS = 10V ID 43A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 43 27 160 Avalanche Current IAS 38 Avalanche Energy L = 0.1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 37 15 Operating Junction & Storage Tempe.

  P0908AD   P0908AD







Part Number P0908ATF
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel Transistor
Datasheet P0908AD DatasheetP0908ATF Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0908ATF TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ ID 43A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range .

  P0908AD   P0908AD







Part Number P0908AT
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0908AD DatasheetP0908AT Datasheet (PDF)

P0908AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 64 41 160 Avalanche Current IAS 38 Avalanche Energy L = 0.1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating.

  P0908AD   P0908AD







Part Number P0908AT
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel Transistor
Datasheet P0908AD DatasheetP0908AT Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0908AT TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ ID 64A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Junction & Stora.

  P0908AD   P0908AD







Part Number P0908AK
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel MOSFET
Datasheet P0908AD DatasheetP0908AK Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P0908AK PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ ID 50A D G S D D DD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current TA = 25 °C TA = 70 °C Avalanche Current Ava.

  P0908AD   P0908AD







N-Channel Transistor

P0908AD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ @VGS = 10V ID 69A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1,2 TC= 25 °C TC= 100 °C ID IDM 69 44 160 Avalanche Current IAS 38 Avalanche Energy L=0.1mH EAS 72 Power Dissipation TC= 25 °C TC= 100°C PD 96 38 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is 55A. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.3 62.5 UNITS °C / W REV 1.1 1 2015/7/29 P0908AD N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER .


2017-02-01 : AM2N-NZ    AM2N-2405DH60-NZ    P1212AT    P1065AT    P1060AT    P0460AS    P0460AT    P1350AT    P8010BT    PA410BTF   


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