Transistor. P0920AD Datasheet

P0920AD Datasheet PDF

Part P0920AD
Description N-Channel Transistor
Feature NIKO-SEM N-Channel Enhancement Mode P0920AD Field Effect Transistor TO-252 Halogen-Free & Lead-.
Manufacture NIKO-SEM
Datasheet
Download P0920AD Datasheet

P0920AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P0920AD Datasheet
NIKO-SEM N-Channel Enhancement Mode P0920AD Field Effect P0920AD Datasheet




P0920AD
NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200 0.42Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 2.8mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Limited by package.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
9
5.8
36
9
112
62
25
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
200
2 2.6
4
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
A
10
VGS = 10V, ID = 4.5A
0.35 0.42 Ω
VDS = 10V, ID = 4.5A
10 S
REV1.0
1
D-51-1



P0920AD
NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss 852
Coss VGS = 0V, VDS = 25V, f = 1MHz 122 nF
Reverse Transfer Capacitance
Crss
25
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs VDS =160V, VGS = 10V,
ID = 9A
Qgd
27
3.6 nC
13
Turn-On Delay Time2
td(on)
35
Rise Time2
Turn-Off Delay Time2
tr VDD = 100V,
250
nS
td(off)
ID 9A, VGS = 10V, RGEN = 6Ω
149
Fall Time2
tf
120
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 9A, VGS = 0V
9A
1.6 V
Reverse Recovery Time
trr IF = 9A, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
VGS = 0V
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
166 nS
861 nC
REV1.0
2
D-51-1




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