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P1403EV8

UNIKC

P-Channel MOSFET

P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 0...


UNIKC

P1403EV8

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P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 , 2 TA = 25 °C TA = 70 °C ID IDM -12 -10 -65 Avalanche Current IAS -39 Avalanche Energy L = 0.1mH EAS 89 Power Dissipation TA = 25 °C TA = 70 °C PD 3 2 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 40 UNITS °C / W Ver 1.0 1 2012/4/13 P1403EV8 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CON...




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