MOSFET. P1503HV Datasheet

P1503HV Datasheet PDF

Part P1503HV
Description Dual N-Channel MOSFET
Feature P1503HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = .
Manufacture UNIKC
Datasheet
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P1503HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM P1503HV Datasheet




P1503HV
P1503HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID
9A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
9
7
40
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
29
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.28
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Lead
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJL
TYPICAL
MAXIMUM
62.5
25
UNITS
°C / W
Ver 1.1
1 2013-11-6



P1503HV
P1503HV
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.8 3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
40
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 7A
VGS = 10V, ID = 9A
VDS = 5V, ID = 9A
15.4 23
10.7 15
35
DYNAMIC
Input Capacitance
Ciss
880
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
230
Reverse Transfer Capacitance
Crss
121
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 9A
VDS = 0.5V(BR)DSS, RL = 40Ω
ID @ 9A, VGS = 10V, RG = 1.5Ω
16.5
8
3
4
20
10
42
14
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 9A, VGS = 0V
2
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
28
34
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-11-6




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