P1504EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID -45A
TO-252
...
P1504EDG
P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID -45A
TO-252
100% Rg tested 100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source
Voltage
VDS -40
Gate-Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA= 25 °C TA= 70 °C
ID IDM
-45 -36 -150
Avalanche Current
IAS -45
Avalanche Energy2
L=0.1mH
EAS
102
Power Dissipation
TC= 25 °C TC= 70°C
PD
50 32
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2VDD = -20V . Starting TJ = 25°C.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 75 2.5
UNITS °C / W
REV 1.0
1 2014/5/12
P1504EDG
P-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TE...
