P1525EDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ @VGS = 10V
ID 15A
TO-252
...
P1525EDB
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TC= 25 °C TC= 100 °C
ID
IDM IAS
15 9.4 60 7.6
Avalanche Energy
L= 1mH
EAS 29
Power Dissipation
TC= 25 °C TC= 100°C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
73 29 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 1.7 62.5
UNITS °C / W
REV 1.1
1 2016/6/28
P1525EDB
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage Gate Threshold Vol...
