P2003EVG

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor D P2003EVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL VDS VGS TC = 25 °C TC = 70 °C ID IDM TC = 25 °C TC = 70 °C PD Tj, Tstg LIMITS -30 ±20 -9 -8 -50 2.5 1.3 -55 to 150 °C UNITS °C / W °C / W W A UNITS V V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RθJc RθJA TYPICAL MAXIMUM 25 50 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID = -7A VGS = -10V, ID = -9A VDS = -10V, ID = -9A -50 25 15 24 35 20 -30 -1 -1.5 -3 ±100 nA -1 -10 µA A m S V LIMITS UNIT MIN TYP MAX OCT-20-2004 1 NIKO-SEM P-Channel Logic Level Enhanc...