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P2003ND5G Datasheet

Part Number P2003ND5G
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-/P-Channel FET
Datasheet P2003ND5G DatasheetP2003ND5G Datasheet (PDF)

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2003ND5G TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 30 20mΩ P-Channel -30 36mΩ ID 25A -19A D1 G1 S1 D2 G2 S2 D1/D2 S1G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current2 TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C .

  P2003ND5G   P2003ND5G






N-/P-Channel FET

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2003ND5G TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 30 20mΩ P-Channel -30 36mΩ ID 25A -19A D1 G1 S1 D2 G2 S2 D1/D2 S1G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current2 TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM IAS EAS PD Tj, Tstg TL N-Channel P-Channel UNITS 30 -30 V ±20 ±20 V 25 -19 20 -15 9 -7 A 7 -5.7 65 -45 19 -18 18 17 mJ 21 13 W 3 2 -55 to 150 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambi.


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