P2004EV

P2004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 20mΩ @VGS = -10V ID -8.7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -8.7 -7 -45 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -45 103 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V. Starting TJ = 25° C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS °C / W Ver 1.0 1 2012/4/13 P2004EV P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP...