P2202CM6
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.5V
ID 5.6A
SOT-23-6
...
P2202CM6
N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.5V
ID 5.6A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source
Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
5.6 4.5 50
Avalanche Current
IAS 21
Avalanche Energy
L=0.1mH
EAS
22
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.1 0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 110 °C / W
Ver 1.0
1 2012/6/25
P2202CM6
N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage
...
