P2402OV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 20V
RDS(ON) 24mΩ @VGS = 4.5V
-20V
43mΩ @VGS = ...
P2402OV
N&P-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY
V(BR)DSS 20V
RDS(ON) 24mΩ @VGS = 4.5V
-20V
43mΩ @VGS = -4.5V
ID 10A -5.2A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source
Voltage
N 20 VDS P -20
Gate-Source
Voltage
N ±12 VGS P ±12
Continuous Drain Current
TA = 25 °C TA = 70 °C
N 10 P -5.2 ID N 6.3 P -3.2
Pulsed Drain Current1
N 40 IDM P -21
Power Dissipation
TA = 25 °C TA = 70 °C
N 2.5 P 2.5 PD N 1.6 P 1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
Ver 1.0
1 2012/10/10
P2402OV
N&P-Channel Enhancement Mode
MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2 Duty cycle ≤1%
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 50 °C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS CH.
MIN TYP MAX...
