P261ALV

P261ALV Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -12V 19mΩ @VGS = -4.5V ID -8.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID IDM -8.5 -6.8 -34 Avalanche Current IAS -35 Avalanche Energy L = 0.1mH EAS 61 Power Dissipation TA= 25 °C TA= 70°C PD 2 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014-5-9 P261ALV Dual P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (...