MOSFET. P2804BVG Datasheet

P2804BVG Datasheet PDF

Part P2804BVG
Description N-Channel MOSFET
Feature P2804BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effec P2804BVG Datasheet
P2804BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2804BVG Datasheet




P2804BVG
P2804BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID
7.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
7.5
6.5
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/4/13



P2804BVG
P2804BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 5V, ID = 6A
VGS = 10V, ID = 7.5A
VDS = 10V, ID = 7.5A
40
1
20
23
±250
1
10
27 42
21 28
19
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
790
175
Reverse Transfer Capacitance
Crss
65
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = 7.5A, VGS = 10V
16
2.5
2.1
Turn-On Delay Time2
td(on)
2.2
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 20V,
VGS = 10V, ID @ 1A, RGEN = 6Ω
7.5
11.8
Fall Time2
tf
3.7
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
15.5
7.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
4.4
15
21.3
7.4
1.3
1
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13




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