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P2806BD Datasheet

Part Number P2806BD
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P2806BD DatasheetP2806BD Datasheet (PDF)

P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V ID 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 30 19 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 43 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction & Storage Temperatu.

  P2806BD   P2806BD






Part Number P2806BD
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel MOSFET
Datasheet P2806BD DatasheetP2806BD Datasheet (PDF)

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2806BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ ID 30A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS .

  P2806BD   P2806BD







N-Channel MOSFET

P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V ID 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 30 19 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 43 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.5 40 UNITS °C / W Rev 1.2 1 2015/10/23 P2806BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 60 1.0 1.5 3.0 ±250 Zero Gate Voltage Drain Current On-State Drain Current1 IDSS ID(ON) VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 125 °C VDS = 10V, VGS = 10V 100 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 12A VGS = 10V, ID = 20A VDS = 5V, ID = 20A 28 38 22.3 28 25 DYNAMIC Input Capacitance Ciss 1500 Output Capacitance Coss V.


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