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P282 Datasheet

Part Number P282
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet P282 DatasheetP282 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P282 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Packag.

  P282   P282






Part Number P28F512
Manufacturers Intel
Logo Intel
Description 512K (64K x 8) CMOS FLASH MEMORY
Datasheet P282 DatasheetP28F512 Datasheet (PDF)

28F512 512K (64K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 120 ns Maximum Access Time Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0W Data Retention Power Y Integrated Program Erase Stop Timers Y Command Register Architecture for Microprocessor Microcontroller.

  P282   P282







Part Number P28F020
Manufacturers Intel
Logo Intel
Description 256K x 8 CMOS FLASH MEMORY
Datasheet P282 DatasheetP28F020 Datasheet (PDF)

E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase  2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read  90 ns Maximum Access Time n CMOS Low Power Consumption  10 mA Typical Active Current  50 µA Typical Standby Current  0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n Command Register Architecture for Micropr.

  P282   P282







Part Number P28F010
Manufacturers Intel
Logo Intel
Description 1024K (128K x 8) CMOS FLASH MEMORY
Datasheet P282 DatasheetP28F010 Datasheet (PDF)

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 65 ns Maximum Access Time Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0 Watts Data Retention Power Y Integrated Program Erase Stop Timer Y Command Register Architecture for Microprocessor Microcontr.

  P282   P282







Part Number P28F002BC
Manufacturers Intel
Logo Intel
Description 2-MBIT (256K x 8) BOOT BLOCK FLASH MEMORY
Datasheet P282 DatasheetP28F002BC Datasheet (PDF)

E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n Low Power Consumption  20 mA Typical Read Current n x8-Only Input/Output Architecture  Space-Constrained 8-bit Applications n Optimized Array Blocking Architecture  One 16-KB Protected Boot Block  Two 8-KB Parameter Blocks  One 96-KB Main Block  One 128-KB Main Block  Top Boot Location n Hardware Data Protection Feature  Erase/Write Lockou.

  P282   P282







Part Number P28F001BX
Manufacturers Intel
Logo Intel
Description 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
Datasheet P282 DatasheetP28F001BX Datasheet (PDF)

1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Y 100 000 Erase Program Cycles Per Block Y Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) Y SRAM-Compatible Write Interface Y Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical Y 12 0V g5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 .

  P282   P282







PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P282 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 15 Watts Junction to Case Thermal Resistance 10 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 1.6 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 45 TYP 5WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc .


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