SPB160N04S2L-03 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID 40 2.7 16...
SPB160N04S2L-03 OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID 40 2.7 160
P- TO263 -7-3
V mΩ A
Enhancement mode Logic Level High Current Rating Low On-Resistance RDS(on) 175°C operating temperature Avalanche rated d v/dt rated
Type Package SPB160N04S2L-03 P- TO263 -7-3
Ordering Code Q67060-S6138
Marking P2N04L03
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1)
TC=25°C TC=100°C
Symbol ID
Value 160 160
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
640 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80A, V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=160A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source
voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-22
http://www.Datasheet4U.com
SPB160N04S2L-03
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown
voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on)...