P2N2907

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package CB E Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 5 Total Power Dissipation @ TC=25ºC Derate above 25ºC PD 1.5 12 Operating and Storage Junction Temperature Range Tj, Tstg - 55 to +150 P2N2907A 60 60 UNIT V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 83.3 ºC/W 200 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base ...