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P2N2907A Datasheet

Part Number P2N2907A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Amplifier Transistor
Datasheet P2N2907A DatasheetP2N2907A Datasheet (PDF)

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value --60 --60 --5.0 --600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Ts.

  P2N2907A   P2N2907A






Part Number P2N2907A
Manufacturers CDIL
Logo CDIL
Description PNP Silicon Transistor
Datasheet P2N2907A DatasheetP2N2907A Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package CB E Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Di.

  P2N2907A   P2N2907A







Part Number P2N2907A
Manufacturers Motorola Inc
Logo Motorola  Inc
Description Amplifier Transistor
Datasheet P2N2907A DatasheetP2N2907A Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2907A/D Amplifier Transistor PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2907A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –60 –60 –5.0 –600.

  P2N2907A   P2N2907A







Amplifier Transistor

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value --60 --60 --5.0 --600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg --55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://ons.


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